Maxime, Berthou: search on Z-Library

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1

Planar edge terminations for high voltage 4H-SiC power MOSFETs

Soler, Victor, Berthou, Maxime, Mihaila, Andrei, Monserrat, Josep, Godignon, Philippe, Rebollo, José, Millán, José

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 1.93 MB

english, 2017

2

Integration of Temperature and Current Sensors in 4H-SiC VDMOS

Berthou, Maxime, Godignon, Philippe, Brosselard, Pierre, Tournier, Dominique, Millán, Jose

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 594 KB

english, 2012

3

Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs

Berthou, Maxime, Godignon, Philippe, Millan, Jose

Journal:

IEEE Transactions on Power Electronics

Year:

2014

Language:

english

File:

PDF, 1.10 MB

english, 2014

4

High Voltage 4H-SiC Power MOSFETs with Boron doped gate oxide

Soler, Victor, Cabello, Maria, Berthou, Maxime, Montserrat, Josep, Rebollo, Jose, Godignon, Philippe, Mihaila, Andrei, Rogina, Maria R, Rodriguez, Alberto, Sebastian, Javier

Journal:

IEEE Transactions on Industrial Electronics

Year:

2017

Language:

english

File:

PDF, 650 KB

english, 2017

5

Investigation of Using SiC MOSFET for High Temperature Applications

Ouaida, Rémy, Berthou, Maxime, Brosselard, Pierre, Oge, Sebastien, Bevilacqua, Pascal, Joubert, Charles

Journal:

Year:

2015

Language:

english

File:

PDF, 739 KB

english, 2015

6

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 4.5kV SiC MOSFET with boron doped gate dielectric

Soler, Victor, Cabello, Maria, Montserrat, Josep, Rebollo, Jose, Millan, Jose, Godignon, Philippe, Berthou, Maxime, Bianda, Enea, Mihaila, Andrei

Year:

2016

Language:

english

File:

PDF, 598 KB

english, 2016

7

Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

Asllani, Besar, Berthou, Maxime, Tournier, Dominique, Brosselard, Pierre, Godignon, Phillippe

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 695 KB

english, 2016

8

Comparison of 5kV SiC JBS and PiN Diodes

Berthou, Maxime, Godignon, Philippe, Calvo, Jose, Mihaila, Andrei, Bianda, E., Nistor, Iulian

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 1.50 MB

english, 2014

9

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Tadjer, Marko J., Constant, Aurore, Godignon, Philippe, Martin-Horcajo, Sara, Bosca, Alberto, Calle, Fernando, Berthou, Maxime, Millán, Jose

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 376 KB

english, 2013

10

[IEEE 2015 17th European Conference on Power Electronics and Applications (EPE '15 ECCE Europe) - Geneva, Switzerland (2015.9.8-2015.9.10)] 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) - Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions

Maxime, Berthou, Remy, Ouaida, Thibault, Chailloux, Pierre, Brosselard, Sebastion, Oge, Dominique, Tournier

Year:

2015

Language:

english

File:

PDF, 2.15 MB

english, 2015

11

High Temperature Capability of High Voltage 4H-SiC JBS

Berthou, Maxime, Godignon, Philippe, Vergne, Bertrand, Brosselard, Pierre

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 708 KB

english, 2012

12

Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel

Niu, Shi Qin, Berthou, Maxime, Tournier, Dominique

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.51 MB

english, 2016

13

[IEEE 2017 International Semiconductor Conference (CAS) - Sinaia (2017.10.11-2017.10.14)] 2017 International Semiconductor Conference (CAS) - Impact of layout on the surge current robustness of 1.2 KV SiC diodes

Banu, Viorel, Berthou, Maxime, Montserrat, Josep, Jorda, Xavier, Godignon, Philippe

Year:

2017

Language:

english

File:

PDF, 529 KB

english, 2017

14

Studies on Floating Contact Press-Pack Diodes Surge Current Capability

Banu, Viorel, Berthou, Maxime, Montserrat, Josep, Jordà, X., Millan, José, Godignon, Phillippe

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 952 KB

english, 2016

15

Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Ouaida, Remy, Berthou, Maxime, Leon, Javier, Perpina, Xavier, Oge, Sebastien, Brosselard, Pierre, Joubert, Charles

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 690 KB

english, 2014

16

[IEEE 2015 IEEE First International Conference on DC Microgrids (ICDCM) - Atlanta, GA, USA (2015.6.7-2015.6.10)] 2015 IEEE First International Conference on DC Microgrids (ICDCM) - State of art of current and future technologies in current limiting devices

Ouaida, Remy, Berthou, Maxime, Tournier, Dominique, Depalma, Jean-Francois

Year:

2015

Language:

english

File:

PDF, 1.32 MB

english, 2015

17

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET

Niu, Shi, Berthou, Maxime, Tournier, Dominique

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 544 KB

english, 2015

18

An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices

Fonder, Jean Baptiste, Brosselard, Pierre, Tournier, Dominique, Berthou, Maxime, Vergne, Bertrand

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

19

Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes

Soler, Victor, Cabello, Maria, Berthou, Maxime, Montserrat, Josep, Rebollo, José, Godignon, Phillippe, Bianda, Enea, Mihaila, Andrei

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 605 KB

english, 2017

20

Short-Circuit Capability Exploration of Silicon Carbide Devices

Berthou, Maxime, Planson, Dominique, Tournier, Dominique

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 678 KB

english, 2015

21

Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

Bartolf, Holger, Sundaramoorthy, Vinoth, Mihaila, Andrei, Berthou, Maxime, Godignon, Philippe, Millán, José

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 1.53 MB

english, 2014

22

Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation

Hazdra, Pavel, Zahlava, Vit, Vobecky, Jan, Berthou, Maxime, Mihaila, Andrei

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 306 KB

english, 2013

23

Repetitive Short-Circuit Tests on SiC VMOS Devices

Berthou, Maxime, Bevilacqua, Pascal, Fonder, Jean Baptiste, Tournier, Dominique

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

24

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Nguyen, Duy Minh, Huang, Runhua, Phung, Luong Viet, Planson, Dominique, Berthou, Maxime, Godignon, Philippe, Vergne, Bertrand, Brosselard, Pierre

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 482 KB

english, 2013

25

Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps

Constant, Aurore, Camara, Nicolas, Godignon, Phillippe, Berthou, Maxime, Camassel, Jean, Decams, Jean Manuel

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 3.66 MB

english, 2010

26

Cryogenic to High Temperature Exploration of 4H-SiC W-SBD

Berthou, Maxime, Asllani, Besar, Brosselard, Pierre, Godignon, Philippe

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.74 MB

english, 2015

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